Light emitting diode, manufacturing method thereof, light emitting diode module, and manufacturing method thereof

ABSTRACT

A manufacturing method of a light emitting diode (LED) and a manufacturing method of an LED module are provided. The manufacturing method of the LED may include manufacturing a plurality of LED chips, manufacturing a phosphor pre-form including a plurality of mounting areas for mounting the plurality of LED chips, applying an adhesive inside the phosphor pre-form, mounting each of the plurality of LED chips in each of the plurality of mounting areas, and cutting the phosphor pre-form to which the plurality of LED chips are mounted, into units including individual LED chips.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.13/428,726, filed on Mar. 23, 2012, which claims the benefit of KoreanPatent Applications No. 10-2011-0104223, filed on Oct. 12, 2011, No.10-2011-0027021, filed on Mar. 25, 2011, and No. 10-2011-0027033, filedon Mar. 25, 2011, in the Korean Intellectual Property Office, thedisclosures of which are incorporated herein by reference.

BACKGROUND

1. Field of the Invention

The present invention relates to a light emitting diode (LED) havinguniform wavelength conversion characteristics, a manufacturing method ofthe LED, an LED module, and a manufacturing method of the LED module.

2. Description of the Related Art

A light emitting diode (LED) chip is a semiconductor device thatconverts electrical energy to optical energy. The LED chip includes acompound semiconductor generating light having a particular wavelengthaccording to an energy band gap. Use of LEDs is expanding to a field ofdisplays such as a mobile display and a computer monitor, a field of aback light unit (BLU) for a liquid crystal display (LCD), and even afield of lighting.

Generally, an LED is manufactured by applying a phosphor resin to anupper portion of an LED chip so that the LED may generate light having adesired wavelength. For example, a white LED having a convexhemispherical surface may be manufactured by dispensing the phosphorresin onto the upper portion of the LED chip.

According to another example, a mask may be placed on a substrate toexpose at least one LED chip mounted on the substrate, and phosphorresin may be printed. Next, the mask may be removed, therebymanufacturing a white LED having a rectangular parallelepiped surface.

However, in the foregoing conventional methods, uniform white light maynot be obtained since the phosphor resin is applied non-uniformly. Whenuniformity of the phosphor resin is extremely low, non-uniformity ofcolor distribution may be so increased that the LED may be inapplicableto products. As a result, yield may be affected.

When the phosphor resin is applied by dispensing, the process isperformed chip by chip. Therefore, productivity per unit time isconsiderably reduced. Furthermore, when printing of the phosphor resinis performed using the mask, the phosphor resin may be deformed as themask is removed.

A structure that modularizes the LED package by mounting the LED packageon a printed circuit board (PCB) may have a limit to miniaturization ofan LED module, and may not decrease a price of the LED module due to ahigh error rate during at least two mounting processes. A luminance anda color of the LED package may have a deviation due to a deviation in awavelength and a luminance of an LED, a manufacturing toleranceassociated with handicrafts, such as a lead frame and the like, and aprocess tolerance associated with a phosphor coating process, a lensmolding process, and the like.

To improve an optical uniformity of the LED module, such as theluminance and a color uniformity of the LED module as a resultantproduct, various LEDs having different luminance degrees and colors maybe grouped by performing binning, and LEDs in different groups may beused together.

A phosphor layer forming method for forming a phosphor layer in the LEDmay coat a substrate with a phosphor before mounting of an LED chip onthe substrate so that a white light is emitted at an LED chip level.Examples of such a method include an electrophoresis scheme, a sprayscheme, a printing scheme, a molding scheme, a phosphor pre-formattaching scheme, and the like.

In a case of a vertical LED chip, a method of forming a phosphor layeron a chip that is already attached to a substrate may include attaching,using a conductive adhesive, an LED chip on the substrate includingwiring, connecting an electrode with another electrode by wire bonding,coating a top side with a transparent adhesive, and attaching a phosphorpre-form to the top side. However, the foregoing method has a difficultyin manufacturing the LED chip providing a white light and has a limit todecrease of color dispersion in an LED package level.

A range of the color dispersion demanded by the market is decreasing anda decrease in the color dispersion may determine the competitivenessthat is directly associated with a quality and a yield. Therefore, thereis a desire for a method of obtaining a high yield to decrease the rangeof the color dispersion and to improve productivity and competitiveness.

SUMMARY

An aspect of the present invention provides a light emitting diode (LED)including a phosphor mold including a phosphor and a resin, and an LEDchip inserted into the phosphor mold.

Another aspect of the present invention provides an LED, a manufacturingmethod of the LED, an LED module, and a manufacturing method of the LEDmodule, achieving uniform wavelength conversion characteristics and lownon-uniformity of color distribution by employing a phosphor pre-form.

Still another aspect of the present invention provides an LED, amanufacturing method of the LED, an LED module, and a manufacturingmethod of the LED module, increasing productivity per unit time byemploying a phosphor pre-form.

Yet another aspect of the present invention provides an LED, amanufacturing method of the LED, an LED module, and a manufacturingmethod of the LED module, securing a bonding force of a phosphorpre-form and a wire bonding space, by forming a first bump and a secondbump in a 2-step structure on an LED chip.

According to an aspect of the present invention, there is provided amanufacturing method of an LED including manufacturing a plurality ofLED chips, manufacturing a phosphor pre-form including a plurality ofmounting areas for mounting the plurality of LED chips, applying anadhesive inside the phosphor pre-form, mounting each of the plurality ofLED chips in each of the plurality of mounting areas, and cutting thephosphor pre-form to which the plurality of LED chips are mounted, intounits including individual LED chips.

According to another aspect of the present invention, there is providedan LED including a phosphor sheet including a mounting area and aplurality of supporters formed on a bottom surface of the mounting area,and an LED chip supported by the plurality of supporters by being bondedto an inside of the mounting area by a light emission surface.

According to another aspect of the present invention, there is provideda manufacturing method of an LED module, the manufacturing methodincluding manufacturing a plurality of LED chips, manufacturing aphosphor pre-form including a plurality of mounting areas for mountingthe plurality of LED chips, applying an adhesive inside the phosphorpre-form, mounting each of the plurality of LED chips in each of theplurality of mounting areas, cutting the phosphor pre-form to which theplurality of LED chips are mounted, into units including individual LEDchips, and mounting the individual LED chips on a substrate.

According to another aspect of the present invention, there is providedan LED module including a substrate including a circuit pattern, aphosphor sheet including a mounting area and a plurality of supportersdisposed on a bottom surface of the mounting area, an LED chip supportedby the plurality of supporters by being bonded to an inside of themounting area by a light emission surface, and mounted on the substratealong with the phosphor sheet, and a lens portion disposed on thephosphor sheet.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects, features, and advantages of the inventionwill become apparent and more readily appreciated from the followingdescription of exemplary embodiments, taken in conjunction with theaccompanying drawings of which:

FIG. 1 is a diagram of a light emitting diode (LED) according to anembodiment of the present invention;

FIGS. 2A and 2B are diagrams illustrating a method of manufacturing anLED, according to an embodiment of the present invention;

FIGS. 3A through 3C are diagrams illustrating a method of manufacturingan LED, according to another embodiment of the present invention;

FIGS. 4A through 4C are diagrams illustrating a method of manufacturingan LED in an array type, according to an embodiment of the presentinvention;

FIG. 5 is a diagram of a phosphor mold including a through hole in anLED according to an embodiment of the present invention;

FIG. 6 is a plan view of a phosphor mold of the LED shown in FIG. 5;

FIGS. 7 and 8 are diagrams illustrating a phosphor pre-form according toan embodiment of the present invention;

FIGS. 9A and 9B are diagrams illustrating a process of manufacturing thephosphor pre-form according to another embodiment of the presentinvention;

FIGS. 10A and 10B are diagrams illustrating a process of manufacturing aphosphor pre-form according to another embodiment of the presentinvention;

FIGS. 11A and 11B are diagrams illustrating various configurations of asupporter included in a phosphor pre-form, according to an embodiment ofthe present invention;

FIGS. 12A to 12D are diagrams illustrating a manufacturing method of anLED according to an embodiment of the present invention;

FIG. 13 is a diagram illustrating an LED manufactured by a manufacturingmethod according to another embodiment of the present invention;

FIGS. 14A and 14B are diagrams illustrating a manufacturing method of anLED module according to an embodiment of the present invention;

FIGS. 15A to 15F are diagrams illustrating a manufacturing method of anLED according to another embodiment of the present invention;

FIGS. 16A to 16B are diagrams illustrating a manufacturing method of anLED module according to still another embodiment of the presentinvention;

FIGS. 17A and 17B are diagrams illustrating a manufacturing method of anLED module according to yet another embodiment of the present invention;

FIGS. 18A through 18F is a diagram illustrating a structure of a filmtype phosphor pre-form according to an embodiment of the presentinvention;

FIG. 19 is a diagram illustrating an example of bonding a film typephosphor pre-form and an LED chip according to an embodiment of thepresent invention;

FIG. 20A is a diagram illustrating an example of bonding LED chips and afilm type phosphor pre-form provided in a sheet form according to anembodiment of the present invention and FIG. 20B is a top viewillustrating dividing of LED chips bonded in FIG. 20A;

FIG. 21 is a diagram illustrating an example of bonding an LED chipformed on a wafer to a film type phosphor pre-form according to anembodiment of the present invention;

FIG. 22 is a diagram illustrating an example of bonding a cavity typephosphor pre-form to an LED chip according to an embodiment of thepresent invention;

FIG. 23A is a diagram illustrating a structure of a cavity type phosphorpre-form according to an embodiment of the present invention and FIG.23B is a diagram illustrating an LED chip mounted on the cavity typephosphor pre-form of FIG. 23A;

FIGS. 24A through 24C are diagrams illustrating a method of mounting anLED chip including a phosphor layer on a substrate;

FIGS. 25A and 25B are diagrams illustrating a phosphor layer formingapparatus that forms a phosphor layer in an LED according to anembodiment of the present invention and FIG. 25C is a diagramillustrating a phosphor layer that is bonded to an LED chip using aphosphor layer forming apparatus according to an embodiment of thepresent invention;

FIG. 26A is a diagram illustrating that a phosphor pre-form is providedin a sheet form in a phosphor layer forming apparatus that forms aphosphor layer in an LED according to an embodiment of the presentinvention, FIG. 26B is a diagram illustrating the phosphor layer that isbonded to the LED chip in FIG. 26A according to an embodiment of thepresent invention, and FIG. 26C is a diagram illustrating an example ofdividing the LED chips of FIG. 26B based on an LED chip unit accordingto an embodiment of the present invention;

FIG. 27 is a diagram illustrating that LED chips formed on a wafer isprovided in a phosphor layer forming apparatus that forms a phosphorlayer in an LED according to an embodiment of the present invention andFIG. 28 is a diagram illustrating that a phosphor pre-form is providedin a sheet form and LED chips are provided being formed on a wafer, in aphosphor layer forming apparatus that forms a phosphor layer in an LEDaccording to an embodiment of the present invention;

FIG. 29A is a diagram illustrating a phosphor layer forming apparatusfor forming a phosphor layer in an LED according to other an embodimentof the present invention, FIG. 29B is a diagram illustrating that an LEDchip and a phosphor pre-form are bonded by moving an upper press and alower press in FIG. 29A, and FIG. 29C is a diagram separatelyillustrating the phosphor layer bonded to the LED chip in FIG. 29B;

FIG. 30A is a diagram illustrating a phosphor layer forming apparatusfor forming a phosphor layer in an LED according to still other anembodiment of the present invention, FIG. 30B is a diagram illustratingthat an LED chip and a phosphor pre-form are bonded by moving an upperpress and a lower press of FIG. 30A, and FIG. 30C is a diagramseparately illustrating the phosphor layer bonded to the LED chip inFIG. 30B; and

FIG. 31A is a diagram illustrating a phosphor layer forming apparatusfor forming a phosphor layer in an LED according to yet other anembodiment of the present invention;

FIG. 31B is a diagram illustrating that an LED chip and a phosphorpre-form are bonded by moving an upper press and a lower press of FIG.31A; and

FIG. 31C is a diagram separately illustrating the phosphor layer bondedto the LED chip in FIG. 31B.

DETAILED DESCRIPTION

Reference will now be made in detail to exemplary embodiments of thepresent invention, examples of which are illustrated in the accompanyingdrawings, wherein like reference numerals refer to the like elementsthroughout. In the description of the present invention, if detaileddescriptions of a related disclosed art or configurations are determinedto unnecessarily make the subject matter of the present inventionobscure, they will be omitted. Terms to be used below are defined basedon their functions in the present invention and may vary according tousers, user's intentions, or practices. Therefore, the definitions ofthe terms should be determined based on the entire specification.

FIG. 1 is a cross-sectional view of a light emitting diode (LED)according to an embodiment of the present invention. Referring to FIG.1, the LED according to the embodiment of the present invention mayinclude a phosphor mold 10 including a phosphor particle and atransparent resin and an LED chip 11 inserted into the phosphor mold 10.Also, electrode connection portions 12 may be formed on the LED chip 11.The electrode connection portions 12 may be bumps. Although FIG. 1illustrates a flip-chip-type LED, embodiments of the present inventionmay be applied to any other types of LED.

The phosphor mold 10 may include a phosphor particle capable ofreceiving ultraviolet (UV) light or blue light emitted by the LED chip11 and thereby emitting white light, and a transparent resin. Thephosphor mold 10 may be obtained by mixing at least one phosphorparticle with the transparent resin at an appropriate mixture ratio. Thetransparent resin may be a material having a high adhesive strength, ahigh heat resistance, a low hygroscopic property, a high lighttransmittance. For example, the transparent resin may be a polymerresin, an epoxy resin, or a silicon-based curable resin. Since thephosphor mold 10 may be formed by curing a phosphor particle and atransparent resin within a mold, the phosphor mold 10 may be athermosetting resin. Here, the type and content of the phosphor particleare not limited and may be controlled according to optical properties ofan LED and a package level. For example, the phosphor particle maycontain a silicate, silicon trioxide, a salt of peroxophosphoric acid,an alkaline-earth oxide, or a rare-earth element at a content ofapproximately several to several tens of percents (%) by weight.Furthermore, additives, such as a hardener, an accelerator, and a moldrelease agent, may be added during manufacturing of the phosphor mold10.

The phosphor mold 10 may include a cavity having such a shape and sizeas to mount the LED chip 11. For example, the phosphor mold 10 may bemanufactured by an injection process using a mold to include a cavityinto which the LED chip 11 may be inserted.

The shapes of the phosphor mold 10 and the cavity of the phosphor mold10 may be varied by controlling the shape of the mold during themanufacturing of the phosphor mold 10. Although the phosphor mold 10 andthe cavity C may have rectangular structures, the present invention isnot limited thereto and the phosphor mold 10 and the cavity may havepolygonal, circular, or oval structures. Also, although a corner portionof the phosphor mold 10 has an angled corner shape, the corner portionof the phosphor mold 10 may have a shape with a curvature. Furthermore,an uneven surface structure or a pattern may be formed in the topsurface of the phosphor mold 10.

The LED chip 11 may be, for example, a semiconductor LED including aGaN-based semiconductor. However, the present invention is not limitedthereto and the LED chip 11 may be any kind of LED chip, such as aflip-chip type or an epi-up type.

Hereinafter, a method of manufacturing an LED, according to anembodiment of the present invention, will be described with reference tothe appended drawings.

FIGS. 2A and 2B are diagrams illustrating a method of manufacturing anLED, according to an embodiment of the present invention.

Referring to FIG. 2A, the phosphor mold 10 including a phosphor particleand a transparent resin may be disposed on a base film 20. Referring toFIG. 2B, an LED chip 11 may be inserted into a cavity of the phosphormold 10. In this state, the phosphor mold 10 may be incompletely curedor temporarily cured. That is, the phosphor mold 10 may be in a pre-formstate. After the LED chip 11 is inserted into the cavity of the phosphormold 10, the incompletely cured phosphor mold 10 may be cured andthereby bonded to the LED chip 11. Out of prefabricated LED chips, onlythe LED chips 11 meeting required performance may be selected andinserted into the cavity of the phosphor mold 10.

Besides the foregoing direct bonding method using a curing technique,the phosphor mold 10 and the LED chip 11 may be bonded to each other byadding an additional bonding material, as will be described withreference to FIGS. 3A through 3C.

FIGS. 3A through 3C are diagrams illustrating a method of manufacturingan LED, according to another embodiment of the present invention.

Referring to FIG. 3A, a phosphor mold 10 including a phosphor particleand a transparent resin may be disposed on a base film 20, and a bondingmaterial 14 may be inserted into a cavity of the phosphor mold 10. Inthis state, the phosphor mold 10 may be temporarily cured or completelycured.

Referring to FIGS. 3B and 3C, an LED chip 11 may be inserted into thecavity of the phosphor mold 10 and curing may be performed so that theLED chip 11 is bonded to the inside of the phosphor mold 10. Since thebonding material 14 is previously injected into the cavity of thephosphor mold 10, the LED chip 11 may be easily bonded to the inside ofthe cavity of the phosphor mold 10. Since the bonding material 14 isinjected in advance in the cavity of the phosphor mold 10, the LED chip11 may be easily bonded to the inside of the cavity.

Here, the bonding material 14 may be formed of a photosensitive adhesive(PSA), a single or composite material of polyolefin and aphotopolymerized acryl resin, or a single or composite material ofphotopolymerized polyimide, epoxy based photopolymerized, andsilicone-based photopolymerized material.

An LED according to an embodiment of the present invention may beproduced as an array type in large quantities. The phosphor mold 10 maybe manufactured as an array type by injection molding using a mold, aswill be described with reference to FIGS. 4A through 4C.

FIGS. 4A through 4C are diagrams illustrating a method of manufacturingan LED as an array type, according to an embodiment of the presentinvention.

FIG. 4A is a plan view of a phosphor mold 10 including an array of aplurality of cavities C. The number of cavities C formed in the phosphormold 10 is not limited, and the depth and diameter of the cavities C maybe determined according to the shape of the LED chip 11. An intervalbetween the cavities C may be selected in consideration of a subsequentprocess of dicing the cavities C.

Although FIG. 4A illustrates that the phosphor mold 10 and the cavitiesC have rectangular shapes, the present invention is not limited theretoand the shapes of the phosphor mold 10 and the cavities may be variouslymodified. In addition to the rectangular structures, the phosphor mold10 and the cavities C may have polygonal, circular, or oval structures.Also, an end portion of the phosphor mold 10 may have an angled cornershape or any other shape having a curvature. An uneven surface or apattern may be formed in the surface of the phosphor mold 10 on whichthe LED chip 11 is mounted.

FIG. 4B is a sectional view illustrating a bonding structure obtained byinserting LED chips 11 into the respective cavities C of the array-typephosphor mold 10. As shown in FIG. 4B, the manufacturing of the LEDaccording to the embodiment of the present invention may includemanufacturing the phosphor mold 10 to include a phosphor particle and atransparent resin and bonding the LED chips 11 with the phosphor mold 10by inserting the LED chips 11 into the cavities C of the phosphor mold10, respectively.

FIG. 4C is a diagram illustrating a process of dicing the array-type LEDshown in FIG. 4B. To increase the manufacturing efficiency, LEDs may beproduced in an array type in large quantities and diced into individualpackages using a cutting member 13 as necessary.

Although only a flip-chip package in which the electrode connectionportions 12 are formed on the top surface of the LED chip 11 isillustrated, an LED according to an embodiment of the present inventionmay adopt LED chips 11 having various other shapes. To this end, thephosphor mold 10 may include a through hole through which an electrodeconnection portion is formed.

FIG. 5 is a diagram illustrating an LED according to an embodiment ofthe present invention, in which a phosphor mold 30 includes a throughhole 32.

Referring to FIG. 5, a phosphor mold 30 may be prepared, and an LED chip31 may be formed in a cavity of the phosphor mold 30. The through hole32 may be formed at a lower part of the LED chip 31 through the phosphormold 30. The through hole 32, as an electrode connection portion, may beconnected through a lateral surface of the LED chip 31. To this end,positions of the through holes 32 may be controlled during formation ofthe phosphor mold 30.

FIG. 6 is a plan view of the phosphor mold 30 of the LED package of FIG.5. Referring to FIG. 6, the phosphor mold 30 may include an array ofcavities C to manufacture a plurality of LED packages. The through holes32 used for forming the electrode connection portions may be formed ineach of the cavities C.

The phosphor mold 30 and their cavities C may be variously modified inshapes, by controlling the shape of a mold during the formation of thephosphor mold 30. Although FIG. 6 illustrates that the phosphor mold 30and the cavities C have rectangular structures, the present invention isnot limited thereto and the phosphor mold 30 and the cavities C may havepolygonal, circular, or oval structures. Furthermore, a corner portionof the phosphor mold 30 may have an angled corner shape or a shape witha curvature. An uneven surface or a pattern may be formed in the surfaceof the phosphor mold 30.

FIGS. 7 and 8 illustrate a phosphor pre-form 40 according to anembodiment of the present invention. To be specific, FIG. 7 is a planview of the phosphor pre-form 40 seen from above and FIG. 2 is asectional view of the phosphor pre-form 40 cut along a line A-A′ shownin FIG. 7.

Referring to FIGS. 7 and 8, the phosphor pre-form 40 may include aplurality of mounting areas 41 for mounting light emitting diode (LED)chips. The plurality of mounting areas 41 may each include a recesscapable of receiving an LED chip up to a lateral surface.

A first supporter 41 a, a second supporter 41 b, and a third supporter41 c may be disposed on a bottom surface of each of the plurality ofmounting areas 41.

The first supporter 41 a, the second supporter 41 b, and the thirdsupporter 41 c may indicate a proper thickness of an adhesive to beapplied in each mounting area 41 while supporting the LED chip to bemounted in each mounting area 41. The first supporter 41 a, the secondsupporter 41 b, and the third supporter 41 c may be disposed, inbalance, so as to support the LED chip.

As shown in FIG. 8, the first supporter 41 a, the second supporter 41 b,and the third supporter 41 c may protrude from the bottom surface ofeach mounting area 41. Since the proper thickness of the adhesive may berecognized through the protruding structure, application of the adhesivemay be facilitated. Also, deterioration of optical characteristics andgeneration of defective LEDs caused by overflowing adhesive may beprevented.

FIGS. 9A and 9B illustrate a process of manufacturing the phosphorpre-form 40 shown in FIGS. 7 and 8.

A manufacturing method of the phosphor pre-form 40 shown in FIGS. 7 and8 may include manufacturing a phosphor resin 1 by mixing phosphorparticles with a transparent resin, and injecting the phosphor resin 1in a first mold 50.

The first mold 50 may include a receiving portion having a rectangularshape corresponding to an appearance of the phosphor pre-form 40. Thephosphor resin 1 may be injected in the receiving portion.

Next, as shown in FIG. 9B, the manufacturing method of the phosphorpre-form 40 may include pressurizing the phosphor resin 1 by a firstmold 60.

To be specific, the first mold 60 may have a size to be received in thereceiving portion of the first mold 50. That is, the first mold 60 has ashorter circumferential length than the first mold 50.

A pressurizing surface of the first mold 60 may have a structurecorresponding to the phosphor pre-form 40. That is, the pressurizingsurface may include a plurality of protruding portions 31 for forming aplurality of mounting areas 41, a plurality of first recesses 31 a forforming a first supporter 41 a, a second supporter 41 b, and a thirdsupporter 41 c in each of the plurality of mounting areas 41, and aplurality of second recesses 32 for dividing the phosphor resin 1 inunits of the mounting area.

When the first mold 60 is received in the first mold 50 and thepressurizing surface pressurizes the phosphor resin 1, the phosphorresin 1 may be moved to a space between the first mold 50 and the firstmold 60. Incomplete curing of the phosphor resin 1 may be performed inthis state.

After the phosphor resin 1 injected in the first mold 50 is pressurizedby the first mold 60 as shown in FIG. 9B, the first mold 50 and thefirst mold 60 are removed, thereby manufacturing the phosphor pre-form40 shown in FIGS. 7 and 8.

FIGS. 10A and 10B illustrate a process of manufacturing a phosphorpre-form according to another embodiment of the present invention.

Referring to FIG. 10A, a manufacturing method of a phosphor pre-form mayinclude pressurizing a phosphor resin 80 injected in a first mold 50 bya second mold 70. The phosphor resin being pressurized by the secondmold 70 may be partially cured, thereby manufacturing a phosphorpre-form 80.

A pressurizing surface of the second mold 70 may include a plurality ofprotruding portions 71, a plurality of first recesses 71 a, and aplurality of second recesses 72.

However, the protruding portions 71 of the second mold 70 may include anuneven surface pattern P. Therefore, when the phosphor pre-form 80 ismanufactured using the second mold 70 shown in FIG. 10A, the unevensurface pattern P may be transferred directly to the phosphor pre-form80.

Next, by removing the first mold 50 and the second mold 70 from aphosphor sheet 80′, a phosphor pre-form 200′ as shown in FIG. 10B may beobtained. The phosphor pre-form 80′ may include a plurality of mountingareas 81, and a plurality of supporters 82 disposed on a bottom surfaceof each of the plurality of mounting areas 81. In addition, bottomsurfaces of the plurality of mounting areas 81 may each include anuneven surface pattern.

FIGS. 11A and 11B illustrate various configurations of supportersincluded in phosphor pre-forms 40′ and 90, according to an embodiment ofthe present invention. Since the phosphor pre-forms 40′ and 90 in FIGS.11A and 11B are illustrated to explain the supporters, only a singlemounting area 41 and 91 is shown in the phosphor pre-forms 40′ and 90,respectively.

The phosphor pre-form 40′ shown in FIG. 11A may be a unit phosphorpre-form cut into unit chips from the phosphor pre-form 40 of FIG. 7.

Referring to FIG. 11A, the phosphor pre-form 40′ may include a mountingarea 41 of an LED chip, a first supporter 41 a, a second supporter 41 b,and a third supporter 41 c.

The first supporter 41 a, the second supporter 41 b, and the thirdsupporter 41 c may be disposed at predetermined distances from a centralpoint P1 of a bottom surface of the mounting area 41. The firstsupporter 41 a, the second supporter 41 b, and the third supporter 41 cmay be arranged to form a triangle when connecting the first supporter41 a with the second supporter 41 b, connecting the second supporter 41b with the third supporter 41 c, and connecting the third supporter 41 cwith the first supporter 41 a. In this case, the first supporter 41 a,the second supporter 41 b, and the third supporter 41 c may be verticesof the triangle.

Although the first supporter 41 a, the second supporter 41 b, and thethird supporter 41 c shown in FIGS. 1 and 7 may be shown to have acylindrical shape, they are not limited thereto, and other shapes suchas a rectangular pillar may be employed.

The first supporter 41 a, the second supporter 41 b, and the thirdsupporter 41 c may have a width or diameter, a length, and a height inunits of micrometers (μm). For example, the diameter, the length, andthe height of the first supporter 41 a, the second supporter 41 b, andthe third supporter 41 c may all be about 10 μm. However, dimensions arenot specifically limited thereto, but instead may be varied according tothe size of the mounting area 41 or a number of the supporters.

Referring to FIG. 11B, the phosphor pre-form 90 may include a mountingarea 91 of an LED chip, a first supporter 91 a, a second supporter 91 b,a third supporter 91 c, and a fourth supporter 91 d.

The first supporter 91 a to the fourth supporter 91 d may be disposed atpredetermined distances from a central point P2 of a bottom surface ofthe mounting area 310. The first supporter 91 a to the fourth supporter91 d may be disposed adjacent to respective corners of the mounting area91.

The first supporter 91 a to the fourth supporter 91 d may be arranged tobe in an axial symmetric structure or a point symmetric structure withrespect to the central point P2. When thus symmetrically arranged, thefirst supporter 91 a to the fourth supporter 91 d may support LED chipsmounted in the mounting area 310 more stably. Also, the LED chips may bemounted at a uniform height.

In addition, the first supporter 91 a to the fourth supporter 91 d maybe arranged to form a rectangle when connecting the first supporter 91 awith the second supporter 91 b, connecting the second supporter 91 bwith the third supporter 91 c, connecting the third supporter 91 c withthe fourth supporter 91 d, and connecting the fourth supporter 91 d withthe first supporter 91 a.

The first supporter 91 a to the fourth supporter 91 d may have a width,a length, and a height in units of μm. The height may be variedaccording to a proper thickness of an adhesive to be applied to themounting area 310.

FIGS. 12A to 12D illustrate a manufacturing method of an LED accordingto an embodiment of the present invention. For convenience ofexplanation, FIGS. 12A to 12D will be described with reference to thephosphor pre-form 40 shown in FIG. 8.

Referring to FIG. 12A, the manufacturing method of the LED may includeapplying an adhesive 400 inside the phosphor pre-form 40 prepared asshown in FIG. 2.

The adhesive 3 may be applied at a height not exceeding the height ofthe first supporter 41 a, the second supporter 41 b, and the thirdsupporter 41 c provided in the plurality of mounting areas 41. That is,only a proper amount of the adhesive 3 may be applied using the firstsupporter 41 a to the third supporter 41 c. Therefore, reduction in abonding force caused by a lack of the adhesive 3 may be prevented. Also,deterioration of optical characteristics caused by an excessivethickness of the adhesive 3 may be prevented.

Referring to FIG. 12B, the manufacturing method of the LED may includemounting an LED chip 100 in each of the plurality of mounting areas 41.In the present embodiment, the LED chip 100 may include a light emissionsurface disposed on one surface, and a flip chip structure with anelectrode disposed on another surface opposite to the light emissionsurface. The light emission surface of the LED chip 100 is mounted toeach of the plurality of mounting areas 41. Here, a bump 110 may beformed in advance at the electrode of the LED chip 100.

As shown in FIG. 12C, in a state in which the LED chip 100 is mounted ineach of the plurality of mounting areas 41, the manufacturing method mayinclude incomplete curing of the adhesive 3 to bond the LED chip 100 andthe phosphor pre-form 40 to each other.

Referring to FIG. 12D, the manufacturing method may include cutting thephosphor pre-form 40 shown in FIG. 12C into units including individualLED chips. Each of the individual LED chips may be the LED chip 100 towhich the unit phosphor pre-form 40′ is attached.

Thus, since the unit phosphor pre-form 40′ having a uniform thickness isused, the LED chip 100 may have uniform wavelength conversioncharacteristics throughout. The unit phosphor pre-form 40′ may have auniform thickness over the light emission surface and lateral surfacesof the LED chip 100. For example, the thickness may be about 5 μm orless. Accordingly, with regard to white light, the LED chip 100including the unit phosphor pre-form 40′ may have improved colorreproduction characteristics. In addition, non-uniformity of colordistribution may be reduced.

Furthermore, forming of the unit phosphor pre-form 40′ with respect tothe plurality of LED chips is performed through a large-area sheet levelrather than in units of individual chip. Accordingly, productivity perunit time may be increased.

Also, cutting is performed after the LED chip 100 is mounted to thephosphor pre-form 40. Therefore, a shape and alignment of the LED chip100 and the unit phosphor pre-form 40′ may be improved.

FIG. 13 is a diagram illustrating an LED manufactured by a manufacturingmethod according to another embodiment of the present invention.

The LED may be manufactured by mounting a plurality of LED chips 100 onthe phosphor pre-form 80′ including the uneven surface pattern P asshown in FIG. 10B and then cutting the phosphor pre-form 80′ into unitsincluding individual LED chips. Each of the individual LED chips may bethe LED chip 100 to which the phosphor pre-form 200′ is attached.

With reference to FIGS. 12D and 13, an example has been described inwhich the light emission surface of the LED chip 100 having a flip chipstructure is bonded to the phosphor pre-forms 40 and 80, respectively.However, the LED chip may be structured in other manners.

FIGS. 14A and 14B illustrate a manufacturing method of an LED moduleaccording to an embodiment of the present invention.

Referring to FIG. 14A, the manufacturing method of the LED module mayinclude flip-chip bonding of an LED manufactured by the methodillustrated in FIGS. 12A to 12D on a substrate 120. The substrate 120may include a first circuit pattern 121 and a second circuit pattern 122connected to an external circuit or external power source. Therefore,the LED may be flip-chip bonded on the substrate 120 such that theelectrode provided to the LED chip 100 faces the first circuit pattern121 and the second circuit pattern 122.

The light emission surface of the LED chip 100 may be attached with theunit phosphor pre-form 40′.

Next, as shown in FIG. 14B, a lens portion 130 may be formed by applyingtransparent resin to an upper portion of the LED chip 100 and the unitphosphor pre-form 40′.

FIGS. 15A to 15F illustrate a manufacturing method of an LED accordingto still another embodiment of the present invention

FIG. 15A illustrates a manufacturing process of a one-chip LED.

Referring to FIG. 15A, an LED chip 200 has a vertical structure andincludes a first electrode 211 and a second electrode 212 disposed onone surface which includes a light emission surface. According to themanufacturing method of the present embodiment, first bumps 221 and 222are formed on the first electrode 211 and the second electrode 212 ofthe LED chip 200. The first bumps 221 and 222 may be formed by plating ametallic material and may have a cylindrical shape.

The first bumps 221 and 222 may be formed in a first size. The firstsize may include at least one element selected from a first width w₁, afirst length, and a first height h₁. According to the presentembodiment, the first bumps 221 and 222 have a cylindrical shape ofwhich the first width w₁ and the first length are equal.

FIG. 15B illustrates a phosphor pre-form 700 according to anotherembodiment of the present invention.

The phosphor pre-form 40 shown in FIGS. 7 and 8 does not need to exposean electrode since an LED chip having a flip-chip structure is used.However, an LED chip having an epi-up structure or a vertical structureneeds to expose an electrode since a surface including the electrode isbonded to a mounting area of a phosphor pre-form. Accordingly, FIG. 15Bshows the phosphor pre-form 700 for mounting of the LED chip having theepi-up structure or the vertical structure.

The phosphor pre-form 300 may include a single mounting area 310 formounting the LED chip 200 shown in FIG. 15A. However, this is only byway of example. Therefore, in actuality, the phosphor pre-form mayinclude a plurality of mounting areas.

The phosphor pre-form 300 may include bump receiving portions 311 and312 and supporters 311 a and 312 a disposed on a bottom surface of themounting area 310.

The bump receiving portions 311 and 312 are adapted to receive the firstbumps 221 and 222 of the LED chip 200. Therefore, the bump receivingportions 311 and 312 may have a cylindrical shape corresponding to theshape of the first bumps 221 and 222.

The bump receiving portions 311 and 312 may have a diameter greater thanthe first width w₁ of the first bumps 221 and 222 so as to smoothlyreceive the first bumps 221 and 222. Also, the bump receiving portions311 and 312 may have a height slightly lower than the first height h₁ ofthe first bumps 221 and 222 so that the first bumps 221 and 222 protrudeslightly.

The supporters 311 a and 312 a may be connected to the bump receivingportions 311 and 312 and protruded from the bottom surface of themounting area 310. The supporters 311 a and 312 a may indicate a properthickness of adhesive and accordingly prevent the adhesive fromoverflowing to the bump receiving portions 311 and 312.

The phosphor pre-form 300 shown in FIG. 15B may be manufactured in anaforementioned manner, that is, by pressurizing phosphor resin using amold and incompletely curing the phosphor resin.

Referring to FIG. 15C, the manufacturing method of the LED may includeapplying an adhesive 320 in the mounting area 310 of the phosphorpre-form 300. The adhesive 320 may be applied so as not to exceed aheight of the supporters 311 a and 312 a. In addition, the adhesive 320may be applied only to the bottom surface of the mounting area 310,excluding the bump receiving portions 311 and 312.

Referring to FIG. 15D, the manufacturing method of the LED may includemounting the LED chip 200 to the phosphor pre-form 300. As shown in FIG.15A, the LED chip 200 may include the first electrode 211 and the secondelectrode 212 disposed on one surface, and the first bumps 221 and 222disposed on the first electrode 211 and the second electrode 212.According to this structure, the LED chip 200 may be mounted in themounting area 310 in a manner such that the first bumps 221 and 222 arereceived in the bump receiving portions 311 and 312.

After the LED chip 200 is mounted to the phosphor pre-form 300, thephosphor pre-form 300 may be fully cured, thereby manufacturing an LED.The fully cured pre-form 300, as a phosphor layer, may convert awavelength of the light emitted from the LED chip 200.

Referring to FIG. 15E the manufacturing method of the LED may includeopening the bump receiving portions 311 and 312 by polishing one surfaceof the phosphor pre-form 300. The bump receiving portions 311 and 312may be opened by the polishing, thereby exposing the first bumps 221 and222. The polished phosphor pre-form 300 may have a thickness of about 5μm or less.

Referring to FIG. 15F, the manufacturing method of the LED may includeforming second bumps 231 and 232 on the first bumps 221 and 222. Thesecond bumps 231 and 232 may be disposed at an outer portion of thephosphor pre-form 300 within the bump receiving portions 311 and 312, soas to be bonded to the first bumps 221 and 222. In the presentembodiment, the second bumps 231 and 232 may have a second size greaterthan the first size of the first bumps 221 and 222. The second size mayinclude at least one element selected from a second width w₂, a secondlength, and a second height h₂.

The second bumps 231 and 232 may have a cylindrical shape similar tothat of the first bumps 221 and 222. The second width w₂ may be greaterthan the first width w₁. Since the second bumps 231 and 232 have a wirebonding structure, the second width w₂ may be greater than across-sectional diameter of the wire. For example, when thecross-sectional diameter of the wire is 1.5 mil, the second width w₂ maybe greater than 1.5 mil.

In addition, the second bumps 231 and 232 may have a width greater thanthe width of the bump receiving portions 311 and 312. Therefore, thesecond bumps 231 and 232 structured to cover the the bump receivingportions 311 and 312 at the outer portion of the phosphor pre-form 300may fix the phosphor pre-form 300.

FIGS. 16A to 16B illustrate a manufacturing method of an LED moduleaccording to yet another embodiment of the present invention.

Referring to FIG. 16A, the manufacturing method of the LED may includebonding an LED manufactured by the method shown in FIGS. 15A to 15F on asubstrate 400.

The substrate 400 may include a first circuit pattern 410 and a secondcircuit pattern 420 connected to an external circuit or external powersource. After the bonding of the LED, wires 241 and 242 may be bonded tothe first circuit pattern 410 and the second circuit pattern 420, andthe two bumps 231 and 232 formed at the outer portion of the phosphorpre-form 300, as shown in FIG. 16B.

Next, as shown in FIG. 16B, transparent resin may be applied to an upperportion of the phosphor pre-form 700′, thereby forming a lens portion250.

In the LED shown in FIG. 16B, the phosphor pre-form 300 may be formed ina thickness of about 5 μm or less over the light emission surface andlateral surfaces of the LED chip 200. The phosphor pre-form 300 mayincrease color reproduction characteristics while reducingnon-uniformity of color distribution.

In addition, since the phosphor pre-form 300 is fixed by the secondbumps 231 and 232 disposed on the bump receiving portions 711 and 712, abonding force with respect to the LED chip 200 may be increased.

FIGS. 17A and 17B illustrate a manufacturing method of an LED moduleaccording to further another embodiment of the present invention.

FIG. 17A shows an LED including a phosphor pre-form 500 and an LED chip600. The LED shown in FIG. 17A may be manufactured in a similar mannerto the method shown in FIGS. 15A to 15F. However, the LED chip 600according to the present embodiment may have a vertical structure inwhich a first electrode 610 is disposed on an upper surface while asecond electrode 620 is disposed on a lower surface. The LED chip 600may further include a first bump 630 disposed on the first electrode610.

For mounting of the LED chip 600, the phosphor pre-form 500 may includea bump receiving portion 810 for receiving the first bump 630. The bumpreceiving portion 810 may have a size and shape corresponding to thefirst bump 630 so as to receive the first bump 630.

The phosphor pre-form 500 may be bonded to the LED chip 600 by adhesive820 applied to an inside of the phosphor pre-form 500. A second bump 640may be formed in a region including the bump receiving portion 510 at anouter portion of the phosphor pre-form 500. The second bump 640 has asize greater than the first bump 630 and the bump receiving portion 810.The second bump 640 may provide a wire bonding space while increasing abonding force between the phosphor pre-form 500 and the LED chip 600.

Referring to FIG. 17B, the manufacturing method of the LED module mayinclude mounting the LED shown in FIG. 17A on a substrate 700 andperforming wire bonding.

The substrate 700 may include a first circuit pattern 710 and a secondcircuit pattern 720. The LED is mounted to the first circuit pattern 710by bonding the second electrode 920 of the LED chip 600 to the firstcircuit pattern 710. In this state, a wire 950 is bonded to the secondbump 940 exposed through the bump receiving portion 810 of the phosphorpre-form 500 and the second circuit pattern 720. Here, the second bump940 may have a size greater than a cross section of the wire 950 andfacilitate bonding of the wire 950.

Next, the manufacturing method of the LED module may include forming alens portion 660 on an upper portion of the phosphor pre-form 500.

According to the foregoing embodiments, the phosphor pre-forms achieveuniform wavelength conversion and low non-uniformity of colordistribution.

In addition, since a plurality of LED chips are mounted on a phosphorpre-form and the phosphor pre-form is cut into units includingindividual LED chips, productivity per unit time may be increased. Also,a shape and alignment of the LED chips and the phosphor pre-form may beimproved.

Moreover, since a first bump and a second bump are formed in a 2-stepstructure on an LED chip, a bonding force of the phosphor pre-form maybe increased and a wire bonding space may be secured.

A phosphor layer forming method according to an embodiment of thepresent invention may include preparing at least one LED chip having thesame optical property, preparing a phosphor pre-form that corresponds tothe at least one LED chip and that includes the phosphor layer and anadhesive layer, and bonding the phosphor pre-form and the at least oneLED chip. Through the foregoing method, an LED having a wavelengthconversion characteristics may be manufactured.

According to the embodiment of the present invention, the phosphor layerforming method for forming a phosphor layer on an LED chip may classifyLED chips for each property to provide a white light. By performingbinning, the LED chips are arranged for each group. Here, binning is aprocess of classifying and grouping the LED chips according to the sameoptical property. That is, the LED chips may be classified and arranged,in advance, according to the same optical property, to provide a whitelight. Therefore, an optical uniformity, such as a luminance of an LEDmodule, a color uniformity, and the like may be improved.

According to the phosphor layer forming method for forming a phosphorlayer on an LED chip, the phosphor pre-form may be classified into twotypes based on a shape. One is a film type applied to a structure thatemits most light via a top of an LED chip, such as a flip chip or avertical LED chip of which a growth substrate is removed. The other is acavity type applied to a structure that emits light via a top and a sideof the growth substrate since the growth substrate is not removed. Thecavity phosphor pre-form will be described when bonding of the cavitytype phosphor pre-form and an LED chip is described.

FIGS. 18A through 18F illustrate a structure of a film type phosphorpre-form 800 according to an embodiment.

Referring to FIGS. 18A through 18F, the structure of the film typephosphor pre-form 800 may be classified into four types. A type (a) ofthe film type phosphor pre-form 800 may include a carrier film 810, aphoto sensitive adhesive (PSA) layer 820, a phosphor layer 830, anadhesive layer 840, and a cover film 850. The cover film 850 may protectthe adhesive layer 840 and may be removed before processing. Theadhesive layer 840 may help attach the phosphor layer 830 to a top of anLED chip. The PSA layer 820 may be a temporary adhesive layer that losesan adhesive property when an ultraviolet ray is irradiated so that thephosphor layer 830 is readily separated from the carrier film 810. Thecarrier film 810 may protect the PSA layer 820 and the phosphor layer830 during transfer of the phosphor pre-form.

In a type (b) of the film type phosphor pre-form 800, the PSA layer 820is removed from the type (a) of the film type phosphor pre-form 800. Itis difficult to separate the phosphor layer 830 from the carrier film810 in the film type phosphor pre-form 800 of the type (b), whencompared to a film type phosphor pre-form including the PSA layer 820.However, when a size of an LED chip is small and adhesion of thephosphor layer 830 is adjustable, the PSA layer 820 may be readilyremoved.

In a type (c) of the film phosphor pre-form 800, the adhesive layer 840is removed from the type (a) of the film phosphor pre-form 100. In thetype (c) of the film phosphor pre-form 800, the adhesive layer 840 maybe removed when adhesion of the phosphor layer 830 is sufficient toattach the film phosphor pre-form 800 to the LED chip or when a bondingprocess for the phosphor layer 830 is optimized by adjusting a curinglevel in the phosphor layer 830.

In a type (d) of the film phosphor pre-form 800, the PSA layer 820 andthe adhesive layer 840 are removed from the type (a) of the filmphosphor pre-form 800. The film type phosphor pre-form 800 of the type(d) may be effective in terms of cost since a number of layersdecreases. In the type (d) of the film phosphor pre-form 800, the PSAlayer 820 and the adhesive 840 may be removed when the phosphor layer830 is designed to maintain optimal adhesion or when an element thatcontrols the adhesion is added to an interface between the carrier film810 and the phosphor layer 830. A refractive index of the adhesive layer840 of the film phosphor pre-form 800 may be greater than or equal to arefractive index of the phosphor layer 830. Therefore, light extractionefficiency for light generated from in the LED chip may be maximized.Referring to FIG. 18E, a top of the phosphor layer 830 may be patternedinto an uneven surface, to improve the light extraction efficiency.Referring to FIG. 18F, a protrusion 860 formed on the phosphor layer 830may be further included.

The protrusion 860 may have a refractive index that is equal to therefractive index of the phosphor layer 830, and may be constituted byorganic and inorganic polymers that are heat-resistant and transparent.The uneven surface formed on the phosphor layer 830 or an uneven surfaceformed on the protrusion 860 may be formed by slit die printing using apreviously patterned cover film.

The adhesive layer 840 may be transparent so that the adhesive layer 840emits light to an outside, and may include an epoxy resin or a siliconresin. High heat-conductive particles may be evenly dispersed in theadhesive layer 840 so that heat generated from the LED chip iseffectively transmitted to the outside via the phosphor layer 830, andthe particles may be nanoscale particles. The adhesive layer 840 mayhave a thickness in the range of about 40 μm to 60 μm, and the adhesivelayer 840 having a thickness of about 50 μm may be desirable.

When an LED chip and a film type phosphor pre-form are prepared, the LEDchip and the film type phosphor pre-form may be individually bonded. Aplurality of LED chips and a plurality of film type phosphor pre-formsmay be simultaneously bonded. When LED chips formed on a wafer areprovided and a film type phosphor pre-form is provided in a sheet form,the LED chips and the phosphor pre-form may be simultaneously bonded. Inthis example, the LED chip and the phosphor pre-form may be arranged tocorrespond to each other before being bonded.

A process that bonds the LED chip and the film type phosphor pre-formwill be described.

FIG. 19 illustrates an example of bonding the film type phosphorpre-form 800 and an LED chip 900 according to example embodiments.

Referring to FIG. 19, various film type phosphor pre-forms 800 areseparately arranged. The adhesive layer 840 may be included at the topof the film type phosphor pre-form 800 so that the LED chip 900 may beattached to the film type phosphor pre-form 800. Here, the film typephosphor pre-form 800 and the LED chip 900 are individually bonded.

The LED chips 200 are separately arranged. In this example, the filmtype phosphor pre-form 800 may be individually bonded to the LED chip900, using an adhesive layer.

Depending on embodiments, a phosphor layer forming apparatus that formsa phosphor layer in an LED chip may simultaneously bond a plurality offilm type phosphor pre-forms to a plurality of LED chips.

FIG. 20A illustrates an example of bonding the LED chips 900 and a filmtype phosphor pre-form provided in a sheet form according to exampleembodiments. FIG. 20B is a top view illustrating individual divided LEDchips 900 bonded in FIG. 20A according to example embodiments.

Referring to FIG. 20A and 20B, the film type phosphor pre-form 1000 maybe provided in a sheet form. The patterned holes 1100 may be formed onthe film-type phosphor pre-form 1000 provided in the sheet form, toarrange the LED chips 900.

The LED chips 900 are arranged between patterned holes 1100 that arespaced away from each other, the LED chips 900 and the film typephosphor pre-form 1000 are bonded, and the film type phosphor pre-form1000 provided in the sheet form may be divided based on the LED chips900 as shown in FIG. 20A. The patterned hole 1100 may function as aguide line for dividing the film type phosphor pre-form 1000 into theLED chips 900.

A phosphor layer forming apparatus that forms a phosphor layer in an LEDchip may simultaneously bond a film type phosphor pre-form provided inthe sheet form and a plurality of LED chips, and may divide the filmtype phosphor pre-form.

FIG. 21 illustrates an example of bonding the LED chip 900 formed on awafer 1200 and the film type phosphor pre-form 1300 according to exampleembodiments.

Referring to FIG. 21, the LED chips 900 formed on the wafer 1200 may beprovided. The LED chips 900 and the film type phosphor pre-forms 1300are bonded, and the wafer 1200 may be divided based on the LED chips900. The film type phosphor pre-forms 1300 may be bonded to the LEDchips 900 formed on the wafer 1200, and may be divided based on the LEDchips 900.

Depending on an embodiment of the present invention, a phosphor layerforming apparatus that forms a phosphor layer in an LED chip maysimultaneously bond LED chips formed on a wafer to film type phosphorpre-forms and may divide the wafer based on the LED chips.

Depending on an embodiment of the present invention, a phosphor pre-formmay be provided in a sheet form and LED chips may be formed on a wafer.The LED chips formed on the wafer may be bonded to the phosphor pre-formin the sheet form, and the phosphor preformed in the sheet form and thewafer may be divided based on an LED chip unit.

Depending on an embodiment of the present invention, the phosphor layerforming apparatus may simultaneously bond a film type phosphor pre-formin a sheet form to LED chips formed on a wafer, and may divide the filmtype phosphor pre-form and the wafer.

A phosphor layer forming method according to other example embodimentsmay include preparing at least one LED chip having the same opticalproperty, preparing a phosphor pre-form that corresponds to the at leastone LED chip and that includes a cavity formed in a central area, andbonding the phosphor pre-form to the at least one LED chip. FIG. 22illustrates an example of bonding a cavity type phosphor pre-form 1400and the LED chip 900 according to example embodiments.

Referring to FIG. 22, cavity type phosphor pre-forms 1400 are separatelyarranged. The cavity type phosphor pre-form 1400 may have a cavity thatis formed in a central area of the cavity type phosphor pre-form 1400and that is thinner than a thickness of the phosphor pre-form and thus,the LED chip 900 may be included in the cavity. Accordingly, a phosphorlayer may be formed on a side and a top side of the LED chip 900, andlight emitted from the LED chip 900 may be all converted into a whitelight. A dispenser (D) may spray liquid adhesive 4 into the cavity ofthe cavity type phosphor pre-form 1400 so that the LED chip 900 may beattached to the cavity type phosphor pre-form 1400. The LED chip 900 maybe individually bonded to the cavity type phosphor pre-forms 1400 asillustrated in FIG. 19.

The LED chips 900 may be separately arranged. In this example, thecavity type phosphor pre-forms 1400 may be individually bonded to theLED chip 900, on a top side of the LED chip 900.

Depending on embodiments of the present invention, a phosphor layerforming apparatus that forms a phosphor layer in an LED chip maysimultaneously bond a plurality of cavity type phosphor pre-forms and aplurality of LED chips.

When an LED chip and a cavity type phosphor pre-form are prepared, theLED chip and the cavity phosphor pre-form may be individually bonded. Aplurality of LED chips and a plurality of film type phosphor pre-formsmay be simultaneously bonded. When LED chips formed on a wafer areprovided and a film type phosphor pre-form is provided in a sheet form,the LED chips and the phosphor pre-form may be simultaneously bonded. Inthis example, the LED chip and the cavity type phosphor pre-form may bearranged to correspond to each other before being bonded.

Furthermore, a cavity type phosphor pre-form may be provided, similar tothe film type phosphor pre-form 100 of FIG. 3A, in a sheet formincluding a plurality of cavities that correspond to LED chips. In thisexample, the LED chips may be bonded to the cavity type phosphorpre-form in the sheet form, and the cavity type phosphor pre-form may bedivided based on the LED chips.

Depending on embodiments of the present invention, LED chips formed on awafer may be provided similar to FIG. 21. In this example, cavity typephosphor pre-forms and the LED chips are bonded, and the wafer may bedivided based on an LED chip unit to which a phosphor layer is attached.

Depending on embodiments of the present invention, a cavity typephosphor pre-form may be provided in a sheet form including a pluralityof cavities corresponding to LED chips, and the LED chips may be formedon a wafer. The cavity type phosphor pre-form provided in the sheet formand the LED chips formed on the wafer may be bonded, and the cavity typephosphor pre-form in the sheet form and the wafer may be divided basedon an LED chip unit.

Depending on embodiments of the present invention, the phosphor layerforming apparatus may simultaneously bond a cavity type phosphorpre-form in the sheet form and LED chips, and may divide the cavity typephosphor pre-form and the wafer.

FIG. 23A illustrates a structure of the cavity type phosphor pre-form1400 according to example embodiments. FIG. 23B illustrates the LED chip900 mounted on the cavity type phosphor pre-form 1400 of FIG. 23A.

Referring to FIGS. 23A and 23B, in the cavity type phosphor pre-form1400, an inclined side 1430 of a cavity may be formed to enable a bottomside 1410 of the cavity to be smaller than a top side 1420 of thecavity. The LED chip 900 that is included in the cavity may beautomatically arranged in a center of the cavity, due to the inclinedside 1430.

An interval between the LED chip 900 and the cavity type phosphorpre-form 1400 may be controlled by adjusting an angle of inclination anda size of an inside of the cavity. The LED chip 900 may be attached tothe cavity of the cavity type phosphor pre-form 1400 using an adhesive4. Subsequently, the LED chip 900 including a phosphor layer may bemounted on a substrate using a bump 910.

A phosphor layer forming method according to example embodiments mayform, in an LED chip level, a phosphor layer by bonding a phosphorpre-form, and a packaging process may be selectively performed to an LEDchip to be used for providing a white light. Thus, a yield of an LEDpackage may be maximized.

A phosphor layer forming apparatus according to example embodiments maysimultaneously bond a plurality of phosphor pre-forms to LED chips thatare arranged for each group through a binning process to provide a whitelight and thus, may decrease color dispersion and improve productivity.

Even though an LED chip including a phosphor layer formed by thephosphor layer forming method according to example embodiments may bemounted on a substrate based on following methods, the mounting may notbe limited thereto.

FIGS. 24A through 24C illustrate a method of mounting the LED chip 900including the phosphor layer 1800 on a substrate 2000.

Referring to FIGS. 24A through 24C, the LED chip 900 including thephosphor layer 1800 may be placed on a carrier tape 1500, and metalframes 1600 are arranged on both sides of the carrier tape 1500.

Referring to FIG. 24A, an ultraviolet irradiator 1700 arranged in abottom of the carrier tape 1500 may emit an ultraviolet ray to decreaseadhesion between the carrier tape 1500 and the phosphor layer 1800.Subsequently, a pick-up device 1900 may lift the LED chip 900 and rotatethe LED chip 900 by about 180 degrees to enable the phosphor layer 1800to face a top side. The LED chip 900 may be mounted on the substrate2000 using another pick-up device 1900.

Referring to FIG. 24B, the ultraviolet irradiator 1700 arranged in thetop of the carrier tape 1500 may emit an ultraviolet ray to decreaseadhesion between the carrier tape 1500 and the phosphor layer 1800.Subsequently, a transfer process may be performed so that the LED chip900 is attached to another carrier tape. The pick-up device 100 may liftthe LED chip 900 including the phosphor layer 1800 and mount the LEDchip 900 on the substrate 2000.

Referring to FIG. 24C, the ultraviolet irradiator 1700 arranged on thetop of the carrier tape 1500 may emit an ultraviolet ray to decreaseadhesion between the carrier tape 1500 and the phosphor layer 1800.Subsequently, a push-press device may press the LED chip 900 from thetop of the carrier tape 1500 so that the LED chip 900 may be directlymounted on the substrate 2000.

A phosphor layer forming method according to other example embodimentswill be described here. In a phosphor layer forming apparatus, accordingto example embodiments, a phosphor pre-form may be a film type phosphorpre-form including a phosphor layer and an adhesive layer, and may be acavity type phosphor pre-form including a cavity formed in a centralarea.

A phosphor layer forming apparatus using a cavity phosphor pre-form willbe described. A phosphor layer forming apparatus using a film typephosphor pre-form may be operated in the same manner, and a dispenserthat sprays an adhesive may be omitted. A location of an LED chip and alocation of a phosphor pre-form may be exchanged. The LED chip may bearranged on a second carrier tape and the phosphor pre-form may bearranged on a first carrier tape.

FIGS. 25A and 25B illustrate a phosphor layer forming apparatus forforming a phosphor layer in an LED according to example embodiments.FIG. 25C illustrates a phosphor layer bonded to an LED chip using thephosphor layer forming apparatus according to example embodiments.

Referring to FIGS. 25A through 25C, the phosphor layer forming apparatusmay include a first carrier tape 1510, a second carrier tape 1520, asensor 1550, an arranging unit 2200, a first metal frame 1610, an upperpress 1810, a lower press 1820, and a roller 2100.

The first carrier tape 1510 may transfer at least one LED chip 900having the same optical property. The second carrier tape 1520 maytransfer the cavity type phosphor pre-form 1150 that is attached to theLED chip 900. The second carrier tape 1520 may transfer the cavity typephosphor pre-form 1150 using the roller 2100. The cavity type phosphorpre-form 1150 may be provided by the second carrier tape 1520 in a stateof being arranged. The sensor 1550 may recognize a location of thesecond carrier tape 1520, and the transferred phosphor pre-form 1150 maybe held by the sensor 1550.

The arranging unit 2200 may arrange the LED chip 900 to correspond tothe arranged phosphor pre-form 1150. The first metal frame 1610 may bearranged at the bottom side of the arranging unit 2200 to assistarranging of the LED chip 900 transferred by the first carrier tape1510.

Referring to FIG. 25B, the arranging unit 2200 may stick to the wholefirst carrier tape 1510 to arrange the LED chip 900. When the arrangingunit 2200 sticks to the whole first carrier tape 1510, a change in alocation of the LED chip 900 on the first carrier tape 1510 may beminimized and thus, accuracy in the arrangement may be improved.

While the arranging unit 2200 holds the first metal frame 1610, and thearranging unit 2200 may arrange the LED chip 900 transferred by thefirst carrier tape 1510 to correspond to the cavity type phosphorpre-form 1150 based on information of a vision device (not illustrated)between the LED chip 900 and the cavity type phosphor pre-form 1150. Inthis example, the arranging unit 2200 may hold the first metal frame1610 using vacuum or magnetism.

When the LED chip 900 corresponds to the cavity type phosphor pre-form1150, the arranging unit 2200 may move down. When the LED chip 900 andthe cavity type phosphor pre-form 1150 are close, the arranging unit2200 may move slowly so that the LED chip 900 and the cavity typephosphor pre-form 1150 smoothly contact each other.

The upper press 1810 may lower the first carrier tape 1510 and the lowerpress 1820 may raise the second carrier tape 1520 so that the LED chip900 and the cavity type phosphor pre-form 1150 are bonded.

The upper press 1810 and the lower press 1820 may further include aheating unit to apply heat to be used for hardening adhesive during thebonding of the LED chip 900 and the cavity type phosphor pre-form 1150.The heating unit may be formed to be integrated with the upper press1810 and with the lower press 1820.

A dispenser (D) that sprays an adhesive 45 into the transferred cavitytype phosphor pre-form 150 may be included, to bond the cavity typephosphor pre-form 1150 and the LED chip 900. The ultraviolet irradiator1700 may be arranged at a bottom side of the second carrier tape 1520 toreadily separate the cavity type phosphor pre-form 1150 from the secondcarrier tape 1520, after the cavity type phosphor pre-form 1150 isbonded to the LED chip 900.

FIG. 26A illustrates that the cavity type phosphor pre-form 1150 isprovided in a sheet form in a phosphor layer forming apparatus thatforms a phosphor layer in an LED chip according to example embodiments.FIG. 26B illustrates the phosphor layer that is bonded to the LED chipin FIG. 26A according to example embodiments. FIG. 26C illustrates anexample of dividing the LED chips of FIG. 26B based on an LED chip unitaccording to example embodiments.

Referring to FIGS. 26A through 26C, the phosphor layer forming apparatusaccording to example embodiments may be the same as the phosphor layerforming apparatus of FIG. 25B, and the cavity type phosphor pre-form1150 transferred by the second carrier tape 1520 may be provided in asheet form. The cavity type phosphor pre-form 1150 may be provided in asheet form including a plurality of cavities corresponding to the LEDchips 900. The cavity type phosphor pre-form 1150 provided in the sheetform and the LED chips 900 are bonded, and the cavity type phosphorpre-form 1150 may be divided, by a dividing unit 2300, based on the LEDchip unit.

FIG. 27 illustrates that LED chips formed on the wafer 1310 are providedin a phosphor layer forming apparatus that forms a phosphor layer in anLED chip 900 according to example embodiments.

Referring to FIG. 27, the LED chips 900 formed on the wafer 1310 may beprovided. The cavity type phosphor pre-forms 1150 and the LED chips 900may be bonded, and the LED chips 900 may be separated by dividing thewafer 1310 based on an LED chip unit including a phosphor layer.

FIG. 28 illustrates that a phosphor pre-form in a sheet form and LEDchips 900 formed on a wafer are provided in a phosphor layer formingapparatus that forms a phosphor layer in an LED chip 900 according toexample embodiments.

Referring to FIG. 28, the cavity type phosphor pre-form 1150 may beprovided in the sheet form including a plurality of cavitiescorresponding to the LED chips 900, and the LED chips 900 may be formedon the wafer 1310. The cavity type phosphor pre-form 1150 in the sheetform may be bonded to the LED chips 900 formed on the wafer 1310, andthe cavity type phosphor pre-form 1150 and the wafer 1310 may be dividedbased on an LED chip unit.

FIG. 29A illustrates a phosphor layer forming apparatus for forming aphosphor layer in an LED according to other example embodiments. FIG.29B illustrates that the LED chip 900 and the cavity type phosphorpre-form 1150 are bonded by moving an upper press and a lower press ofFIG. 29A. FIG. 29C separately illustrates the phosphor layer and the LEDchip 900 that are bonded in FIG. 29B.

Referring to FIGS. 29A through 29C, a phosphor layer forming apparatusaccording to example embodiments may further include the first metalframe 1610 and the second metal frame 1620. The second metal frame 1620may be placed on a holder 650 that is spaced away from the lower press1820, and may assist arranging of the cavity type phosphor pre-form1150. The metal frame holder 650 may hold the second metal frame 1620,and the second metal frame 1620 may hold the cavity type phosphorpre-form 1150 in an arranged state.

After the LED chip 900 may be arranged to correspond to the cavity typephosphor pre-form 1150, the upper press 1810 may lower the first carriertape 1510 and the lower press 1820 may raise the second carrier tape1520 so that the LED chip 900 and the cavity type phosphor pre-form 1150may be bonded.

FIG. 30A illustrates a phosphor layer forming apparatus for forming aphosphor layer in an LED according to still other example embodiments.FIG. 30B illustrates that the LED chip 900 and the cavity type phosphorpre-form 1150 are bonded by moving an upper press and a lower press ofFIG. 30A. FIG. 30C separately illustrates the phosphor layer and the LEDchip 900 that are bonded in FIG. 30B.

Referring to FIGS. 30A through 30C, a phosphor layer forming apparatusaccording to example embodiments may further include the ultravioletirradiator 1700 in the lower press 1820. The ultraviolet irradiator 1700may be integrally formed with the lower press 1820. The ultravioletirradiator 1700 may be included to separate the cavity type phosphorpre-form 1150 from the second carrier tape 1520 after the LED chip 900and the cavity type phosphor pre-form are bonded. Therefore, theultraviolet irradiator 1700 may be integrally formed with the lowerpress 1820 to readily separate the cavity type phosphor pre-form 1150from the second carrier tape 1520 and thus, a process may be simplified.

A phosphor layer forming apparatus according to example embodiments maysimultaneously bond a plurality of phosphor pre-forms to LED chips thatare arranged for each group through a binning process to provide a whitelight and thus, may increase accuracy or precision of bonding betweenthe LED chip and the phosphor pre-form. Also, productivity may beincreased since a process is simplified.

Although a few exemplary embodiments of the present invention have beenshown and described, the present invention is not limited to thedescribed exemplary embodiments. Instead, it would be appreciated bythose skilled in the art that changes may be made to these exemplaryembodiments without departing from the principles and spirit of theinvention, the scope of which is defined by the claims and theirequivalents.

What is claimed is:
 1. A manufacturing method of a light emitting diode(LED), comprising: manufacturing a plurality of LED chips which areseparated from one another; manufacturing a phosphor pre-form comprisinga plurality of mounting areas for mounting the plurality of LED chipsand a plurality of protruding areas for dividing the plurality ofmounting areas; mounting each of the plurality of LED chips in acorresponding one of the plurality of mounting areas; and cutting thephosphor pre-form in the plurality of protruding areas for dividing theplurality of mounting areas, into units including individual LED chips,wherein sidewalls of each of the plurality of LED chips are in contactwith the corresponding mounting area.
 2. The manufacturing method ofclaim 1, wherein the mounting of each of the plurality of LED chips in acorresponding one of the plurality of mounting areas comprises: bondinga light emission surface of each of the plurality of LED chips having aflip chip structure in the corresponding mounting area.
 3. Themanufacturing method of claim 1, wherein the manufacturing of theplurality of LED chips comprises: forming a first bump having a firstsize on at least one electrode disposed on one surface of each of theplurality of LED chips.
 4. The manufacturing method of claim 3, whereinthe manufacturing of the phosphor pre-form comprises: forming a bumpreceiving portion in a position corresponding to the first bump on abottom surface of each of the plurality of mounting areas.
 5. Themanufacturing method of claim 4, wherein the mounting of each of theplurality of LED chips in a corresponding one of the plurality ofmounting areas is performed such that the first bump is received in thebump receiving portion.
 6. The manufacturing method of claim 5, furthercomprising: polishing the phosphor pre-form such that the bump receivingportion is opened after the mounting of each of the plurality of LEDchips in the corresponding mounting area.
 7. The manufacturing method ofclaim 6, further comprising: forming a second bump on the first bumpexposed through the bump receiving portion at an outer portion of thephosphor pre-form, the second bump having a second size greater than thefirst size and a width greater than a width of the bump receivingportion.
 8. The manufacturing method of claim 1, wherein themanufacturing of the phosphor pre-form comprises: manufacturing phosphorresin by mixing phosphor particles with transparent resin; injecting thephosphor resin in a first mold; pressurizing the phosphor resin injectedin the first mold by a second mold having a structure corresponding tothe phosphor pre-form; partially curing the pressurized phosphor resin;and removing the first mold and the second mold.
 9. A light emittingdiode (LED) comprising: a phosphor sheet comprising a mounting area anda plurality of supporters protruding from a bottom surface of themounting area; and an LED chip supported by the plurality of supporterssuch that a light emission surface of the LED chip is bonded to aninside of the mounting area with adhesive filled in the phosphor sheetat a height, wherein sidewalls of the LED chip are in contact with themounting area.
 10. The LED of claim 9, wherein the LED chip comprises atleast one electrode disposed on the light emission surface and a firstbump disposed on the at least one electrode, the first bump having afirst size.
 11. The LED of claim 10, wherein the phosphor sheetcomprises a bump receiving portion to receive the first bump, and theLED chip further comprises a second bump disposed on the first bumpexposed through the bump receiving portion, the second bump having asecond size greater than the first size.
 12. The LED of claim 9, whereinthe plurality of supporters have any one of an axial symmetry structureand a point symmetry structure.
 13. A manufacturing method of a lightemitting diode (LED) module, the manufacturing method comprising:manufacturing a plurality of LED chips which are separated from oneanother; manufacturing a phosphor pre-form comprising a plurality ofmounting areas for mounting the plurality of LED chips; mounting each ofthe plurality of LED chips in a corresponding one of the plurality ofmounting areas; cutting the phosphor pre-form in the plurality ofdifferent level areas for dividing the plurality of mounting areas, intounits including individual LED chips; and mounting the individual LEDchips on a substrate, wherein sidewalls of each of the plurality of LEDchips are in contact with the corresponding mounting area.
 14. Themanufacturing method of claim 13, wherein the mounting of each of theplurality of LED chips in a corresponding one of the plurality ofmounting areas comprises: bonding a light emission surface of each ofthe plurality of LED chips having a flip chip structure in thecorresponding mounting area.
 15. The manufacturing method of claim 13,wherein the manufacturing of the plurality of LED chips comprises:forming a first bump having a first size on at least one electrodedisposed on one surface of each of the plurality of LED chips.
 16. Themanufacturing method of claim 15, wherein the manufacturing of thephosphor pre-form comprises: forming a bump receiving portion on abottom surface of each of the plurality of mounting areas in a positioncorresponding to the first bump.
 17. The manufacturing method of claim16, wherein the mounting of each of the plurality of LED chips in acorresponding one of the plurality of mounting areas comprises: mountingof each of the plurality of LED chips in the corresponding mounting areasuch that the first bump is received in the bump receiving portion; andpolishing the phosphor pre-form such that the bump receiving portion isopened.
 18. The manufacturing method of claim 17, further comprising:forming a second bump on the first bump exposed through the bumpreceiving portion at an outer portion of the phosphor pre-form, thesecond bump having a second size greater than the first size and a widthgreater than a width of the bump receiving portion.